Professor of Experimental Physics
Head of Semiconductor Physics
Deputy Head of Department (Teaching)
Fellow and Director of Studies in Physics at Robinson College
Cavendish Laboratory,
JJ Thomson Avenue
Cambridge CB3 0HE
Websites:
Biography:
David Ritchie is Professor of Experimental Physics and Head of the Semiconductor Physics group. He is also a Fellow and Director of Studies in Physics at Robinson College. He received his first degree, in physics, from the University of Oxford in 1980 and his D Phil from the University of Sussex in 1986 studying the physics of mixtures of liquid 3He and 4He at milli-kelvin temperatures. Since then he has been working on III-V semiconductor physics and has extensive experience of the growth, fabrication and measurement of low dimensional electronic and optical structures. He has been co-author of over 750 papers and has been awarded the 2008 Tabor medal and prize by the UK Institute of Physics for distinguished research in surface or nanoscale physics.
Research groups
Research Interests
The physics and technology of III-V semiconductors including:
- Molecular beam epitaxy (MBE)
- Terahertz quantum cascade lasers
- Self assembled InAs quantum dots
- High mobility two-dimensional electron and hole gases
- Regrowth on patterned substrates
- Interactions between closely spaced 2D electron and hole gases
- Single and entangled photon sources
- Single photon detectors
Key Publications
"Anomalous coulomb drag in electron-hole bilayers", Croxall A. F., Das Gupta K., Nicoll C. A., Thangaraj M., Beere H. E., Farrer I., Ritchie D. A. and Pepper M., 2008, Phys. Rev. Lett., 101, 246801.
"Bell-Inequality Violation with a Triggered Photon-Pair Source", Young R. J., Stevenson R. M., Hudson A. J., Nicoll C. A., Ritchie D. A. and Shields A. J.,2009, Phys. Rev. Lett., 102, 030406.
"Stable conductance plateaus from ridge wires grown by MBE on a patterned substrate". Pfaendler S. M-L., Atkinson P. and Ritchie D. A., 2008, Appl. Phys. Lett., 92, 212114
"Temporal characteristics of surface-acoustic-wave-driven luminescence from a lateral p-n junction". Gell J. R., Ward M. B., Sheilds A. J., Atkinson P., Bremner S. P., Anderson D., Kataoka M., Barnes C. H. W., Jones G. A. C. and Ritchie D. A., 2007, Appl. Phys. Lett., 91, 013506.
"A semiconductor source of triggered entangled photon pairs". Stevenson R. M., Young R. J., Atkinson P., Cooper K., Ritchie D. A., and Shields A. J., 2006, Nature, 439 (7073), 179-182.
"Fabrication of closely spaced, independently contacted electron-hole bilayers in GaAs/AlGaAs Heterostructures". Keogh J. A., Gupta K. Das, Beere H. E., Ritchie D. A. and Pepper M., 2005, Appl. Phys. Lett., 87, 202104.
"Electrically driven single-photon source". Yuan Z., Kardynal B. E., Stevenson R. M., Shields A. J., Lobo C. J., Cooper K., Beattie N. S., Ritchie D. A. and Pepper M., 2002, Science, 295, 102-105.
"Terahertz semiconductor-heterostructure laser". Kohler R., Tredicucci A., Beltram F., Beere H. E., Linfield E. H., Davies A. G., Ritchie D. A., Iotti R. C. and Rossi F., 2002, Nature, 417, 156-159.