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Magnetic Field-Controlled Bandgap of a Phosphorene-Based PN-Device for Sensing Application

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A transversely applied magnetic field can alter the energy bandgap and other corresponding electrical parameters of a PN-device at the nanoscale. The present theoretical analysis demonstrates that the applied magnetic field controls the bandgap and resistivity of a phosphorene nanoribbon (PNR)-based PN-device. This allows the device to function as a magnetic field sensor as well. For this purpose, the electron–acoustic phonon scattering mechanism is used to estimate phonon-mediated electronic resistivity, which is a parameter directly linked to the bandgap. The armchair configuration of nanoribbons is subjected to energy bandgap and resistivity calculations owing to their semiconducting nature. It is found that in the absence of a magnetic field, the device exhibits a semiconducting nature, but when a magnetic field is supplied, the device acquires a conducting (metallic) state. This semiconductor-to-metal transition is attributable to the change in resistivity of the PN-device under a transversely applied magnetic field, which ultimately results in a change in bandgap. The outcome of the work is pivotal for (i) various nanoelectronic applications that demand semiconductor–metal transition and (ii) designing a magnetic field sensor via bandgap regulation of PNR-based PN-devices.

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Acknowledgments

The authors acknowledge the Institute of Technology, Nirma University for providing the basic facility.

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Authors and Affiliations

  1. Institute of Technology, Nirma University, Ahmedabad, 382481, India

    Ankur Pandya, Keyur Sangani & Ankur Dwivedi

  2. Institute of Science, Nirma University, Ahmedabad, 382481, India

    Nikunj Joshi

  3. Department of Physics, Faculty of Science, The M.S. University of Baroda, Vadodara, 390002, India

    Prafulla K. Jha

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Pandya, A., Sangani, K., Joshi, N. et al. Magnetic Field-Controlled Bandgap of a Phosphorene-Based PN-Device for Sensing Application. J. Electron. Mater. 52, 1113–1120 (2023). https://doi.org/10.1007/s11664-022-10053-7

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